Navitas SiC MOSFET Distributor | 1200 V GeneSiC Line
Genuine Navitas GeneSiC 1200 V SiC MOSFETs from 25 mOhm in TO-263-7, AEC-Q101 qualified, for chargers, solar, storage and DC-DC.
Navitas SiC MOSFET Overview
BeiLuo supplies genuine Navitas GeneSiC silicon carbide MOSFETs, wide-bandgap switches that turn off cleanly with no tail current and switch far faster than silicon with lower loss. The GeneSiC G3F family uses trench-assisted planar technology and is offered in 1200 V ratings with on-resistance values as low as 25 milliohm, in a surface-mount TO-263-7 package that keeps the gate loop tight and is AEC-Q101 qualified for automotive and industrial designs. Because SiC switches fast, a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in on-board chargers, EV charging, solar inverters, energy storage and high-voltage DC-DC converters. The most stable on-resistance over temperature of the G3F technology makes the thermal design predictable, and the balanced capacitances and low gate-drain charge ease the gate-drive design. The robust body diode with low forward voltage and low reverse-recovery charge allows the switch to freewheel cleanly, which simplifies a bidirectional stage. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you compare on-resistance, gate charge and package, choose a gate-drive scheme and verify the thermal path. Selecting a SiC MOSFET means matching the voltage class, current and hot on-resistance to your converter, then confirming the gate drive and loop inductance for clean switching.
Navitas SiC MOSFET Product Range
In-stock SiC MOSFET series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.
| Model | VDSS (V) | ID (A) | RDS(on) typ (mOhm) | Package | Technology |
|---|---|---|---|---|---|
| G3F25MT12J | 1200 V | 87 A | 25 | TO-263-7 | Gen3F |
| G3F40MT12J | 1200 V | 59 A | 40 | TO-263-7 | Gen3F |
Frequently Asked Questions
How do I read the Navitas SiC MOSFET table?
VDSS sets the voltage class, ID the current and RDS(on) the conduction loss, while the Package decides the gate-loop inductance and the assembly method. The Technology column confirms the chip generation.
On-resistance rises with temperature, so check the hot value for cooling.
Why choose a SiC MOSFET over a silicon IGBT?
SiC switches faster with far lower switching loss and has no tail current, so a converter can run at higher frequency with smaller magnetics and a smaller cooling system. That raises efficiency and power density in chargers, solar and storage.
At low frequency and high current, a silicon IGBT can still be more economical.
How do I drive a Navitas SiC MOSFET?
The G3F family works with a standard +15 V / -5 V gate drive, so it is compatible with common gate drivers. Keep the gate loop short, choose the gate resistor for your EMI target, and measure overshoot at the device terminals.
Our SiC review covers gate-drive practice.
How do I size cooling for a SiC MOSFET?
Use the on-resistance hot value at your junction temperature to estimate conduction loss, add switching loss, and verify the thermal path from junction to ambient. Do not size cooling from the 25 C figure.
Our FAE team can run the loss estimate for you.
Documentation
Need a quote or samples?
Request pricing, samples or technical consultation for Navitas SiC MOSFET products. Our FAE team responds within one business day.
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