Navitas Products | SiC MOSFET and SiC Diode | BeiLuo

Browse genuine Navitas GeneSiC SiC power devices available through BeiLuo: 1200 V SiC MOSFETs and SiC Schottky MPS diodes with in-stock availability, import documentation and FAE-backed technical support.

Navitas SiC MOSFET

Navitas SiC MOSFET

SiC MOSFET - Navitas SiC MOSFET Distributor | 1200 V GeneSiC Line

Key parameters

  • 1200 V drain-source voltage
  • On-resistance from 25 mOhm (typical)
  • TO-263-7 surface-mount package
  • Gen3F trench-assisted planar technology
  • AEC-Q101 qualified, 175 C maximum junction

Typical models

Applications

  • EV on-board chargers
  • Solar inverters
  • Energy storage
  • High-voltage DC-DC
  • UPS systems

Advantages

  • Stable on-resistance over temperature
  • Low gate-drain charge for fast switching
  • Robust body diode with low recovery charge
  • AEC-Q101 automotive qualification

Complementary parts

2 series in stock Explore SiC MOSFET
Navitas SiC Diode

Navitas SiC Diode

SiC Diode - Navitas SiC Diode Distributor | MPS Schottky Diodes

Key parameters

  • 1200 V reverse voltage class
  • 10 A to 100 A forward current
  • Merged PiN Schottky (MPS) structure
  • No reverse-recovery charge
  • 175 C maximum junction temperature

Typical models

Applications

  • Power factor correction
  • Solar inverters
  • Switch-mode power supplies
  • Energy storage
  • Induction heating

Advantages

  • Gen4 thin chip for low forward voltage
  • Enhanced surge current withstand
  • Positive temperature coefficient for paralleling
  • Temperature-independent fast switching

Complementary parts

2 series in stock Explore SiC Diode